High Shock-Resistant Design of Piezoresistive High-g Accelerometer
Yongle Lu, Zhen Qu, Jie Yang, Wenxin Wang, Wenbo Wang, Yu Liu, Journal of Information Processing Systems Vol. 19, No. 2, pp. 173-188, Apr. 2023
https://doi.org/10.3745/JIPS.04.0270
Keywords: FEM, High-g Accelerometer, Natural Frequency, Piezoresistive, Transverse Effect
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Cite this article
[APA Style]
Lu, Y., Qu, Z., Yang, J., Wang, W., Wang, W., & Liu, Y. (2023). High Shock-Resistant Design of Piezoresistive High-g Accelerometer. Journal of Information Processing Systems, 19(2), 173-188. DOI: 10.3745/JIPS.04.0270.
[IEEE Style]
Y. Lu, Z. Qu, J. Yang, W. Wang, W. Wang, Y. Liu, "High Shock-Resistant Design of Piezoresistive High-g Accelerometer," Journal of Information Processing Systems, vol. 19, no. 2, pp. 173-188, 2023. DOI: 10.3745/JIPS.04.0270.
[ACM Style]
Yongle Lu, Zhen Qu, Jie Yang, Wenxin Wang, Wenbo Wang, and Yu Liu. 2023. High Shock-Resistant Design of Piezoresistive High-g Accelerometer. Journal of Information Processing Systems, 19, 2, (2023), 173-188. DOI: 10.3745/JIPS.04.0270.